Semiconductor device and method for fabricating the same

ABSTRACT

A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first bottom barrier metal (BBM) layer on the first region and the second region; forming a first work function metal layer on the first BBM layer on the first region and the second region; removing the first work function metal (WFM) layer and part of the first BBM layer on the second region; and forming a diffusion barrier layer on the first WFM layer on the first region and the first BBM layer on the second region.

BACKGROUND OF THE INVENTION 1. Field of the Invention

The invention relates to a method for fabricating semiconductor device,and more particularly to a method for fabricating metal gate transistor.

2. Description of the Prior Art

In current semiconductor industry, polysilicon has been widely used as agap-filling material for fabricating gate electrode ofmetal-oxide-semiconductor (MOS) transistors. However, the conventionalpolysilicon gate also faced problems such as inferior performance due toboron penetration and unavoidable depletion effect which increasesequivalent thickness of gate dielectric layer, reduces gate capacitance,and worsens driving force of the devices. In replacing polysilicongates, work function metals have been developed to serve as a controlelectrode working in conjunction with high-K gate dielectric layers.

However, in current fabrication of high-k metal transistor, particularlyduring the stage when spacer is formed on the sidewall of gatestructure, issues such as over-etching or undercut often arise andcausing etching gas to etch through spacer until reaching the bottom ofthe gate structure. This induces erosion in high-k dielectric layerand/or bottom barrier metal (BBM) and affects the performance of thedevice substantially. Hence, how to resolve this issue has become animportant task in this field.

SUMMARY OF THE INVENTION

According to an embodiment of the present invention, a method forfabricating semiconductor device includes the steps of: providing asubstrate having a first region and a second region; forming a firstbottom barrier metal (BBM) layer on the first region and the secondregion; forming a first work function metal layer on the first BBM layeron the first region and the second region; removing the first workfunction metal (WFM) layer and part of the first BBM layer on the secondregion; and forming a diffusion barrier layer on the first WFM layer onthe first region and the first BBM layer on the second region.

According to another aspect of the present invention, a semiconductordevice includes a substrate having a first region and a second regionand a gate structure on the first region and the second region of thesubstrate. Preferably, the gate structure comprises: a first bottombarrier metal (BBM) layer on the first region and the second region,wherein a thickness of the first BBM layer on the second region is lessthan a thickness of the first BBM layer on the first region; a firstwork function metal (WFM) layer on the first region; and a diffusionbarrier layer on a top surface and a sidewall of the first WFM layer onthe first region and the first BBM layer on the second region.

These and other objectives of the present invention will no doubt becomeobvious to those of ordinary skill in the art after reading thefollowing detailed description of the preferred embodiment that isillustrated in the various figures and drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1-5 illustrate a method for fabricating semiconductor deviceaccording to an embodiment of the present invention.

FIGS. 6-8 illustrate a method for fabricating semiconductor deviceaccording to an embodiment of the present invention.

DETAILED DESCRIPTION

Referring to FIGS. 1-5, FIGS. 1-5 illustrate a method for fabricatingsemiconductor device according to an embodiment of the presentinvention. As shown in FIG. 1, a substrate 12 such as a siliconsubstrate or silicon-on-insulator (SOI) substrate is provided, a firstregion such as a PMOS region 14 and a second region such as a NMOSregion 16 are defined on the substrate 12, and a shallow trenchisolation (STI) 18 is formed in the substrate 12 to divide the PMOSregion 14 and the NMOS region 16. Next, at least a gate structure 20 isformed on the substrate 12 and extending across the PMOS region 14 andthe NMOS region 16. In this embodiment, the formation of the gatestructure 20 could be accomplished by sequentially forming a gatedielectric layer, a gate material layer, and a selective hard mask onthe substrate 12, conducting a pattern transfer process by using apatterned resist (not shown) as mask to remove part of the hard mask,part of the gate material layer, and part of the gate dielectric layerthrough single or multiple etching processes, and then stripping thepatterned resist. This forms a gate structure 20 composed of a patternedgate dielectric layer 22, a patterned gate material layer 24, and apatterned hard mask (not shown) on the substrate 12.

It should be noted that even though the present embodiment pertains to aplanar MOS transistor, according to another embodiment of the presentinvention, the present invention could also be applied to a non-planarMOS transistor such as fin field effect transistor (FinFET) devices,which is also within the scope of the present invention.

Next, at least a spacer 26 is formed on sidewalls of the gate structure20, source/drain regions 28, 30 and/or epitaxial layer (not shown) areformed in the substrate 12 adjacent to two sides of the spacer 26 on thePMOS region 14 and NMOS region 16 respectively, and a selective silicidelayer (not shown) could be formed on the surface of the source/drainregions 28, 30. In this embodiment, the spacer 26 could be a singlespacer or a composite spacer, such as a spacer including but not limitedto for example an offset spacer and a main spacer. Preferably, theoffset spacer and the main spacer could include same material ordifferent material while both the offset spacer and the main spacercould be made of material including but not limited to for example SiO₂,SiN, SiON, SiCN, or combination thereof. The source/drain regions 28, 30could include dopants and epitaxial material of different conductivetype depending on the type of device being fabricated. For example, thesource/drain region 28 on the PMOS region 14 could include p-typedopants and/or silicon germanium (SiGe) while the source/drain region 30on the NMOS region 16 could include n-type dopants, SiC, and/or SiP, butnot limited thereto.

Next, referring to FIGS. 2-5, FIGS. 2-5 illustrate follow-up fabricationprocesses taken along the longer axis of gate structure 20 or along thesectional line AA′ shown in FIG. 1. As shown in FIG. 2, a contact etchstop layer (CESL) 32 is formed on the surface of the substrate 12 andthe gate structure 20 and an interlayer dielectric (ILD) layer 34 isformed on the CESL 32 thereafter. Next, a planarizing process such aschemical mechanical polishing (CMP) process is conducted to remove partof the ILD layer 34 and part of the CESL 32 to expose the gate materiallayer 24 made of polysilicon and the top surface of the gate material 24is even with the top surface of the ILD layer 34.

Next, a replacement metal gate (RMG) process is conducted to transformthe gate structure 20 into metal gate. For instance, the RMG processcould be accomplished by first performing a selective dry etching or wetetching process using etchants including but not limited to for exampleammonium hydroxide (NH₄OH) or tetramethylammonium hydroxide (TMAH) toremove the gate material layer 24 and even gate dielectric layer 22 ofthe gate structure 20 for forming a recess 36 in the ILD layer 34 onboth PMOS region 14 and NMOS region 16 at the same time. Next, aselective interfacial layer 38 or gate dielectric layer, a high-kdielectric layer 40, a bottom barrier metal (BBM) layer 42, another BBMlayer 44, and a work function metal layer 46 are formed in the recess36.

In this embodiment, the high-k dielectric layer 40 is preferablyselected from dielectric materials having dielectric constant (k value)larger than 4. For instance, the high-k dielectric layer 40 may beselected from hafnium oxide (HfO₂), hafnium silicon oxide (HfSiO₄),hafnium silicon oxynitride (HfSiON), aluminum oxide (Al₂O₃), lanthanumoxide (La₂O₃), tantalum oxide (Ta₂O₅), yttrium oxide (Y₂O₃), zirconiumoxide (ZrO₂), strontium titanate oxide (SrTiO₃), zirconium silicon oxide(ZrSiO₄), hafnium zirconium oxide (HfZrO₄), strontium bismuth tantalate(SrBi₂Ta₂O₉, SBT), lead zirconate titanate (PbZr_(x)Ti_(1-x)O₃, PZT),barium strontium titanate (Ba_(x)Sr_(1-x)TiO₃, BST) or a combinationthereof.

Preferably, the BBM layer 42 and the BBM layer 44 could be made of samematerial or different material depending on the demand of the productwhile both layers 42, 44 could all be selected from the group consistingof Ti, TiN, Ta, and TaN. The work function metal layer 46 at this stageis preferably a p-type work function metal layer having a work functionranging between 4.8 eV and 5.2 eV, which may include but not limited tofor example titanium nitride (TiN), tantalum nitride (TaN), or tantalumcarbide (TaC).

Next, as shown in FIG. 3, a patterned mask such as a patterned resist 48is formed to cover the PMOS region 14, and an etching process isconducted by using the patterned resist 48 as mask to remove the workfunction metal layer 46 and part of the BBM layer 44 on the NMOS region16. It should be noted that the etching process conducted as this stageis preferably an over-etching process such that after removing all ofwork function metal layer 46 on the NMOS region 16 some of the BBM layer44 on the NMOS region 16 is removed thereafter. This exposes part of thesidewall of the BBM layer 44 on the PMOS region and reduces the overallthickness of the BBM layer 44 on NMOS region 16 so that the remainingthickness of the BBM layer 44 on NMOS region 16 is slightly less thanthe thickness of the BBM layer 44 on PMOS region 14. The patternedresist 48 is stripped thereafter.

Next as shown in FIG. 4, a diffusion barrier layer 50 is formed on thesurfaces of the work function metal layer 46 on PMOS region 14 and theBBM layer 44 on NMOS region 16. It should be noted that since part ofthe BBM layer 44 on NMOS region 16 has been removed by theaforementioned etching process, the diffusion barrier layer 50 at thisstage is preferably formed on the top surface of the work function metallayer 46 on PMOS region 14, a sidewall of the work function metal layer46 on PMOS region 14, a sidewall of the BBM layer 44 on PMOS region 14,and the top surface of the BBM layer 44 on NMOS region 16. Viewing fromanother perspective, the diffusion barrier layer 50 is formed to extendfrom the PMOS region 14 to the NMOS region 16 and covering the workfunction metal layer 46 on PMOS region 14, the BBM layer 44 on NMOSregion 16, and sidewalls of the work function metal layer 46 and BBMlayer 44 at the intersecting point between PMOS region 14 and NMOSregion 16 at the same time. Preferably, the BBM layer 44 and thediffusion barrier layer 50 are made of same material such as but notlimited to for example TaN.

Next, as shown in FIG. 5, another work function metal layer 52 and a lowresistance metal layer 54 are sequentially formed on the surface of thediffusion barrier layer 50 on both PMOS region 14 and NMOS region 16,and a planarizing process such as CMP is conducted to remove part of thelow resistance metal layer 54, part of the work function metal layer 52,part of the diffusion barrier layer 50, part of the BBM layer 44, partof the BBM layer 42, and part of the high-k dielectric layer 40 to formmetal gate 56.

Preferably, the work function metal layer 52 is a n-type work functionmetal layer having work function ranging between 3.9 eV and 4.3 eV,which may include titanium aluminide (TiAl), zirconium aluminide (ZrAl),tungsten aluminide (WAl), tantalum aluminide (TaAl), hafnium aluminide(HfAl), or titanium aluminum carbide (TiAlC), but not limited thereto.The low-resistance metal layer 54 could include copper (Cu), aluminum(Al), titanium aluminum (TiAl), cobalt tungsten phosphide (CoWP) or anycombination thereof.

Next, a pattern transfer process could be conducted by using patternedmask to remove part of the ILD layer 34 and part of the CESL 32 adjacentto the metal gate 56 to form contact holes (not shown) exposing thesource/drain regions 28, 30 underneath. Next, metals such as a barrierlayer including Ti, TiN, Ta, TaN, or combination thereof and a metallayer including W, Cu, Al, TiAl, CoWP, or combination thereof could bedeposited into the contact holes, and a planarizing process such as CMPis conducted to remove part of the metals to form contact plugselectrically connecting the source/drain regions 28, 30. This completesthe fabrication of a semiconductor device according to an embodiment ofthe present invention.

Referring again to FIG. 5, FIG. 5 further illustrates a structural viewof a semiconductor device according to an embodiment of the presentinvention. As shown in FIG. 5, the semiconductor device preferablyincludes a gate structure 20 or metal gate 56 disposed on the substrate12 while the gate structure 20 extends or laterally crossing the PMOSregion 14 and NMOS region 16 at the same time. Preferably, the gatestructure 20 includes an interfacial layer 38 or gate dielectric layerextending from the PMOS region 14 to the NMOS region 16, a high-kdielectric layer 40 extending from the PMOS region 14 to the NMOS region16, a BBM layer 42 extending from the PMOS region 14 to the NMOS region16, another BBM layer 44 extending from the PMOS region 14 to the NMOSregion 16, a work function metal layer 46 disposed on the PMOS region14, a diffusion barrier layer 50 extending from the PMOS region 14 tothe NMOS region 16, another work function metal layer 52 extending fromthe PMOS region 14 to the NMOS region 16, and a low resistance metallayer 54 extending from the PMOS region 14 to the NMOS region 16.

Viewing from a more detailed perspective, the high-k dielectric layer 40is extended from the PMOS region 14 to NMOS region 16 and disposed onthe surface of the interfacial layer 38, the BBM layer 42 is extendedfrom the PMOS region 14 to NMOS region 16 and directly contacting thesurface of the high-k dielectric layer 40, the BBM layer 44 is extendedfrom the PMOS region 14 to NMOS region 16 and directly contacting thesurface of the BBM layer 42, the work function metal layer 46 is onlydisposed on the PMOS region 14 and directly contacting the surface ofthe BBM layer 44 on PMOS region 14 without extending to the NMOS region16, the diffusion barrier layer 50 is extended from the PMOS region 14to NMOS region 16 and directly contacting the top surface of the workfunction metal layer 46 on PMOS region, a sidewall of the work functionmetal layer 46 on PMOS region 14 (or more specifically on theintersecting point between PMOS region 14 and NMOS region 16), asidewall of the BBM layer 44 on PMOS region 14 (or more specifically onthe intersecting point between PMOS region 14 and NMOS region 16), andthe top surface of BBM layer 44 on NMOS region 16, the work functionmetal layer 52 is extended from the PMOS region 14 to NMOS region 16 anddirectly contacting the top surface of the diffusion barrier layer 50,and the low resistance metal layer 54 is extended from the PMOS region14 to NMOS region 16 and directly contacting the surface of the workfunction metal layer 52.

It should be noted that the thickness of the BBM layer 44 on NMOS region16 is preferably less than the thickness of the BBM layer 44 on PMOSregion 14 or more specifically the thickness of the BBM layer 44 on NMOSregion 16 is approximately half the thickness of the BBM layer 44 onPMOS region 14, and at the same time the thickness of the diffusionbarrier layer 50 is preferably equal to the thickness of the BBM layer44 on NMOS region 16 or half the thickness of the BBM layer 44 on PMOSregion 14. In other word, the total thickness of the BBM layer 44 anddiffusion barrier layer 50 combined on NMOS region 16 is preferablyequal to the total thickness of a single BBM layer 44 on PMOS region 14.

Referring to FIGS. 6-8, FIGS. 6-8 illustrate a method for fabricatingsemiconductor device according to an embodiment of the presentinvention. As shown in FIG. 6, it would be desirable to sequentiallyform an interfacial layer 38, a high-k dielectric layer 40, a BBM layer42, another BBM layer 44, and a work function metal layer 46 on bothPMOS region 14 and NMOS region 16 as shown in FIG. 2 and then directlyform a diffusion barrier layer 50 on the surface of the work functionmetal layer 46 on both PMOS region 14 and NMOS region 16.

Next, as shown in FIG. 7, a patterned mask such as a patterned resist 58is formed to cover the PMOS region 14, and an etching process isconducted by using the patterned resist 58 as mask to remove thediffusion barrier layer 50 and the work function metal layer 46 on NMOSregion 16 to expose the surface of the BBM layer 44 underneath. Thepatterned resist 58 is stripped thereafter.

Next, as shown in FIG. 8, another work function metal layer 52 and a lowresistance metal layer 54 are formed on the surface of the diffusionbarrier layer 50 on PMOS region 14 and the surface of the BBM layer 44on NMOS region 16, and a planarizing process such as CMP is conducted toremove part of the low resistance metal layer 54, part of the workfunction metal layer 52, part of the diffusion barrier layer 50, part ofthe work function metal layer 46, part of the BBM layer 44, part of theBBM layer 42, and part of the high-k dielectric layer 40 to form metalgate 60.

Those skilled in the art will readily observe that numerousmodifications and alterations of the device and method may be made whileretaining the teachings of the invention. Accordingly, the abovedisclosure should be construed as limited only by the metes and boundsof the appended claims.

1. A method for fabricating semiconductor device, comprising: providinga substrate having a first region and a second region; forming a firstbottom barrier metal (BBM) layer on the first region and the secondregion; forming a first work function metal layer on the first BBM layeron the first region and the second region; removing the first workfunction metal (WFM) layer and part of the first BBM layer on the secondregion; and forming a diffusion barrier layer on the first WFM layer onthe first region and the first BBM layer on the second region.
 2. Themethod of claim 1, further comprising: forming a gate structure on thesubstrate on the first region and the second region; forming aninter-layer dielectric (ILD) layer around the gate structure; removingthe gate structure to form a recess; forming the first BBM layer in therecess; forming the first WFM layer on the first BBM layer; removing thefirst WFM layer and part of the first BBM layer on the second region;forming the diffusion barrier layer on the first region and the secondregion; forming a second WFM layer on the diffusion barrier layer; andforming a low resistance metal layer on the second WFM layer to form ametal gate.
 3. The method of claim 2, further comprising forming thediffusion barrier layer on a top surface and a sidewall of the first WFMlayer.
 4. The method of claim 2, wherein the first WFM layer comprises ap-type WFM layer and the second WFM layer comprises a n-type WFM layer.5. The method of claim 1, wherein a thickness of the first BBM layer onthe first region is equal to a combined thickness of the first BBM layerand the diffusion barrier layer on the second region.
 6. The method ofclaim 1, wherein the first BBM layer and the diffusion barrier layercomprise a same material.
 7. The method of claim 1, further comprisingforming a second BBM layer on the substrate before forming the first BBMlayer.
 8. The method of claim 7, wherein the first BBM layer and thesecond BBM layer comprise different materials. 9-15. (canceled)